Ge:Ga blocked-impurity-band detectors having long-wavelength thresholds of 190 μm and peak quantum efficiencies of 4% have been fabricated. This performance approaches that of state-of-the-art discrete Ge:Ga photoconductors, with the additional benefit of good response at wavelengths longer than that obtained with unstressed photoconductors.
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Watson et al. (1988) studied this question.
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