InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12×10−3 Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.