The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 µm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50 Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V.
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Sowlati et al. (1996) studied this question.
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