Observation of the Josephson effect in Nb3Ge dayem bridges

Dayem bridge Josephson junctions have been successfully fabricated for the first time from sputtered thin films of high-TcNb3Ge. Microwave induced current steps have been observed in the IV characteristic of one of these junctions at a frequency of 10 GHz at temperatures between 20.9 and 21.0K. This junction was fabricated by a mechanical scribing technique instead of sputter etching. Sputter etched junctions also exhibited Josephson steps, but only at much lower temperatures, due to a depression of Tcby the sputter etching process.