Ge-Doped β -Ga2O3 MOSFETs

We report on MOSFETs fabricated on Ge-doped β-Ga2O3homoepitaxial material grown by molecular beam epitaxy on (010) Fe-doped semi-insulating substrates. The Ge-doped channel devices performed similar to previously reported devices with Sn- and Si-doped channels with the drain currentON/OFFratios of >108and the saturated drain current of >75 mA/mm at VG= 0 V. Hall effect measurements showed a high carrier mobility of 111 cm2/(V·s) with 4 × 1017cm-3active carriers. A MOSFET with a gate-drain spacing of 5.5 μm had a three-terminal breakdown voltage of 479 V.