A new type of magnetoresistive memory using spin-valve multilayers composed of semi-hard magnetic layers and soft magnetic layers separated with nonmagnetic layers was developed. The fabricated memory element was composed of a word line of Au film and a magnetoresistive sense line of [{CoPt/Cu/NiFeCo}/Cu] N multilayers. This spin-valve memory has nonvolatile and nondestructive readout properties.
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Irie et al. (1995) studied this question.
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