Extraction of the Effective Mobility of In0.53Ga0.47AsMOSFETs

The extraction of the effective mobility on In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm2/V middots. The removal ofCitresponse in the splitC-Vmeasurement of these devices is crucial to the accurate analysis of these devices. Low-temperature splitC-Vcan be used to freeze out theDitresponse to the ac signal but maintain its effect on the free carrier density through the substrate potential. Simulations that match this low-temperature data can then be ldquowarmed uprdquo to room temperature and an accurate measure ofQinvis achieved. These results confirm the fundamental performance advantages of In0.53Ga0.47As MOSFETs.