Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

We have demonstrated the 1.5 μm electroluminescence from implanted Er ions inside the SiO2 insulator of a silicon metal-oxide-semiconductor structure under forward bias. The Er ions are excited by the direct impact from electrons tunneling through the oxide at electric fields larger than 6 MV/cm. Under these conditions, we measured an excitation cross-section of 6±2×10−15 cm2 and a lifetime of the excited I1313/2 level of 1.5 ms.