Sn was employed in Ge 2 Sb 2 Te 5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge 2 Sb 2 Te 5 showed face centered cubic (fcc) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge 2 Sb 2 Te 5 . However, Sn doping increased the phase transformation temperature to hcp of Ge 2 Sb 2 Te 5 . 17 at. % Sn-doped Ge 2 Sb 2 Te 5 had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge 2 Sb 2 Te 5 . In addition, 17 at. % Sn-doped Ge 2 Sb 2 Te 5 showed stable and reversible device performance.
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Park et al. (2006) studied this question.
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