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The present work is devoted to investigation of optical absorption in pure Gd 3 Ga 5 O 12 (GGG) single crystals in the spectral range 0.2-1.1 m induced under influence of the 235 U ions irradiation with energy 2640 MeV and a fluence 10 9 -10 11 cm -2 . The induced absorption for 10 9 cm -2 is caused by recharging of point defects, both growth ones and impurities. After irradiation by 235 U ions with fluences starting from 3 10 9 cm -2 the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
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Potera et al. (2010) studied this question.
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