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July 1, 1976Journal of Vacuum Science and Technology

Effect of surface treatment on surface recombination velocity and diode leakage current in GaP

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GSG. B. StringfellowUniversity of Utah

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G. B. Stringfellow (1976) studied this question.

synapsesocial.com/papers/6a90fc01c39ca0eda1830458 https://doi.org/10.1116/1.569018

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