Electron interaction with domain walls in antiferromagnetically coupled multilayers

For antiferromagnetically coupled Fe/Cr multilayers the low-field contribution to the resistivity ρ DW , which is caused by the domain walls, is strongly enhanced at low temperatures. The low-temperature resistivity ρ DW varies according to a power law, ρ DW ( T ) = ρ DW (0) − A · T α with the exponent α ≃ 0.7–1. This behavior cannot be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the non-uniform gauge fields caused by the domain walls.