Oxidation of Chemically Vapor‐Deposited Silicon Nitride in Dry Oxygen at 1923 to 2003 K

Oxidation of chemically vapor‐deposited Si 3 N 4 was studied in dry oxygen between 1923 and 2003 K under a total pressure of 0.1 MPa using a thermogravimetric technique. At 1923 to 1953 K, a parabolic rate mechanism prevailed for the oxidation reaction. From 1973 K, the oxidation reaction exhibited a mixed linear‐parabolic rate mechanism. At 2003 K, on the other hand, the oxidation of Si 3 N 4 showed a linear behavior. Both amorphous silica and cristobalite were identified as reaction products on the oxidized Si 3 N 4 surface using X‐ray diffraction analysis. The percentage of cristobalite in the surface oxide scale was determined from the X‐ray diffraction pattern. It was found that, at 2003 K, only amorphous silica was formed. The parabolic rate constants (K p ) obtained from this study were close to those obtained in the literature.