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GaAs single-drift flat-profile IMPATT diodes with high efficiency for upper Ka-band frequencies were fabricated. The realization of the p—n junction was carried out by diffusion of zinc into aGaAs epilayer using a paint-on technique. Using low ohmic contacts and reducing substrate thickness and width of the undepleted region efficiencies up to 16-4% at 178GHz could be obtained.
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Küpper et al. (1979) studied this question.
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