The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography

Nanoscale parallel line-space patterns are imprinted into a spin-on organosilicate thin film that contains a second phase pore generating material (porogen). Imprints are converted into nanoporous low-dielectric patterns by vitrification at 430 °C where the porogen is volatilized and creates nanoscale pores (2.2 nm) in the vitrified organosilicate network (see figure). The results are well-defined, high-modulus, nanoporous patterns with an estimated dielectric constant of k∼2.4.