The hot electron relaxation time is studied in an n-type GaN film grown by molecular beam epitaxy on sapphire. A femtosecond pump–probe technique is used in which the electrons are excited by an infrared pump and the carrier dynamics are monitored by a tunable near ultraviolet probe. Complex transients, showing bleaching or induced absorption, are observed. The data are fitted by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The LO-phonon emission time is measured to be 0.2 ps.
No takes yet. Share an insight, caveat, or question.
Ye et al. (1999) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: