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February 1, 1999Japanese Journal of Applied Physics

Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy

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Authors

KTKeiichi TakenakaKyoto Sangyo UniversityHAH. AsahiThe University of OsakaHKHideki KOHNational Archives and Records Administration

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Takenaka et al. (1999) studied this question.

synapsesocial.com/papers/6a91104e55de849fda7a7c41https://doi.org/10.1143/jjap.38.1026
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  4. 4Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy1991 · 67 citations
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