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Wannier-Stark localization in strained-layer Inₓ{Ga}_{1{{-}}x}$As-GaAs superlattices is measured using electroreflectance (ER) spectroscopy at 4.5 K. Analysis of the ER data reveals third-derivative line shapes for two samples biased near flat band, which become more first-derivative-like at high applied fields. The exciton transition energies obtained from the line-shape analysis are in good agreement with both photocurrent measurements and exciton Stark ladder calculations for fields greater than 5 kV cm^-1. The flat-band ER spectra of the two superlattices reveal distinct features due to their finite sizes, not predicted by the Kr\"onig-Penney model.
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Gibb et al. (1993) studied this question.
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