Photoreflectance of InGaAs/GaAs strained-layer superlattices is reported and explained based on the discussion of the photomodulation mechanisms and the lineshapes in the superlattice case. It is found that photoreflectance of a superlattice has a mixing lineshape of both first and third derivatives, and the mixing depends strongly on the coupling between the quantised states in adjacent potential wells.
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Y. S. Tang (1989) studied this question.
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