Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100 °C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300 °C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.