(InAs)1(GaAs)1 layered crystals (LC) were successfully grown on (100) InP substrate for the first time. The growth method was metallorganic chemical vapor deposition (MOCVD). Monolayer growth was achieved by low growth rate and rapid change of gas composition. Layered crystals were confirmed by X-ray diffraction peaks at the (100) and (300) positions. The electrical and optical properties of (InAs)1(GaAs)1 LC were also studied.
No takes yet. Share an insight, caveat, or question.
Fukui et al. (1984) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: