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The fabrication technology and the properties of a light-emitting device including a porous pn junction are presented. We employ the selective formation of different kinds of porous silicon substructures caused by the doping level and the illumination during anodization. The device has a nanoporous light-emitting n layer between a mesoporous p+-doped capping layer and the macroporous n substrate. The pn junction formed in this way has strong rectifying characteristics. It shows bright red-orange light emission under forward bias. Compared to simple metal-porous silicon devices, the structure has an increased quantum efficiency (factor 10–100).
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Steiner et al. (1993) studied this question.
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