Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductor

The optical and electrical properties of nonstoichiometric germanium oxynitrides and their interfaces with a semiconductor are discussed depending on their composition. The band gap, dielectric constant, and refractive index of the films obtained are shown to depend linearly on the oxygen content. The nonstoichiometric germanium oxynitride–semiconductor (GaAs, Si, Ge) interface is characterized by a low surface state density, lack of hysteresis, and frequency dispersion of the C–U characteristics and a high stability to the bias-temperature treatment.