We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9dBm (bit error ratio <10/sup -9/) at 10 Gb/s was achieved.
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Yang et al. (2003) studied this question.