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A neutron activation technique has been used to analyze the gallium content in SiO2 films deposited on n-type GaAs. Gallium was observed in the SiO2 films after annealing at temperatures between 730 and 940 °C. It is found that the surface of GaAs reacts with the H2O in the SiO2 films and/or ambient gas via pinholes at these high temperatures. The reaction is influenced by the partial pressure of water in the ambient gas.
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Ohdomari et al. (1978) studied this question.
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