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The performance is examined of a divide-by-four circuit based on DCFL-NOR gates using a newly developed enhancement-mode N-InAlAs/InGaAs HEMT technology. A divider, with gates 1.2 μm long, had a maximum clock frequency of 5.8GHz and a power dissipation of 2.5mW/gate. It was found that the switching speed of an InP-based HEMT is 1.5 times faster than that of a GaAs-based HEMT.
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Harada et al. (1993) studied this question.
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