Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire

This paper reports a fabrication technology of polycrystalline silicon (poly-Si) “slit nano wire”, with dimensions of less than 10 nm. The processing procedures consist of a 100 nm electron beam lithography, precision dry etching, conformable deposition of silicon dioxide layer, slit etching, conformable deposition of doped amorphous silicon (a-Si) layer and etch back. The resulting poly-Si “slit nano wire” layer measures less than 10 nm in width as ascertained by a cross section transmission electron microscope (X-TEM). A possible application of the “slit nano wire” to a future optoelectronic devices is also discussed.