The authors have performed a comprehensive study of the high-frequency current gain h/sub 21/ in InP-In/sub 0.53/Ga/sub 0.47/As HBTs (heterojunction bipolar transistors) (with an emitter area A/sub E/=3.5 mu m*3.5 mu m and 500 AA base thickness with p-type doping level of 1*10/sup 20/ cm/sup -3/) over the temperature range 55 K
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Laskar et al. (1993) studied this question.
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