High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

State of the art fT and fmax values of 135 and 113 GHz for MOCVD grown C-doped base InP/InGaAs HBTs are achieved with a 0.5 × 4.7 µm2 emitter area device. A rapid increase in fT at a very low VCE value of 0.3 V owing to the abrupt base dopant profile demonstrates the suitability of C-doped-base HBTs for high-speed and low-power circuit applications.