Simulation of X-ray diffraction curves from ion-implanted wafers and relaxed II-VI superlattices

A simulation program for the calculation of X-ray diffraction curves (Bragg case) on the basis of the dynamical diffraction theory was developed. The strain distribution in the sample is modelled as a sequence of a large number of arbitrarily strained layers with no limitation on the reflectivity of the individual layers. The program was used for the investigation of the strain induced by Ge ions implanted into Si wafers and the strain in short-period II-VI superlattices.