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June 1, 1980Journal of Applied Physics

X-ray study of lattice strain in boron implanted laser annealed silicon

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Authors

BLB. C. LarsonProtochips (United States)JBJ. F. BarhorstOak Ridge National Laboratory

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Larson et al. (1980) studied this question.

synapsesocial.com/papers/6a6f2ef678a11c550e08dd84https://doi.org/10.1063/1.328069
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Unidirectional contraction in boron-implanted laser-annealed silicon1978 · 85 citations
  2. 2X-ray diffraction in a perfect crystal with disturbed surface layer1977 · 47 citations
  3. 3Laser annealing of boron-implanted silicon1978 · 224 citations
  4. 4Asymmetric X-ray Bragg reflexion and shallow strain distribution in silicon single crystals1977 · 51 citations
  5. 5Determination of strain distributions from X-ray Bragg reflexion by silicon single crystals1977 · 133 citations