Frequency synthesis at mm-wave range suffers from a severe tradeoff between phase noise (PN) and frequency tuning range (FTR). This work presents the analysis and compares the performance of fundamental-mode voltage-controlled oscillators (F-VCOs) to harmonic-mode VCOs (H-VCOs). It is shown that unlike a mm-wave F-VCO, an H-VCO can simultaneously achieve higher FTR and lower PN. An H-VCO architecture, denoted as self-mixing VCO (SMV), is presented where the VCO core generates both the first (fο) and second harmonic (2fο) and then mixes them together to obtain the desired mm-wave third-harmonic (3fο). Use of a Class-C push-push topology as the VCO core enhances the second-harmonic content to improve mixing efficiency, decreases parasitic capacitance, and improves PN. Compared to an F-VCO operating in a mm-wave band at a fundamental frequency that equals 3fο, the proposed SMV architecture achieves about 2× higher FTR and a better PN performance. A 52.8-62.5 GHz SMV prototype is designed and implemented in a 0.13 μm CMOS process. Measurement results show that the VCO achieves an FTR of 16.8% with a PN of -100.6 dBc/Hz at 1 MHz offset-resulting in an FTR-inclusive figure-of-merit (FoMT) of -190.85 dBc/Hz while consuming 7.6 mW from a 1.2 V supply.
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Shirazi et al. (2016) studied this question.
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