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Very dilute C+ (carbon) ion implantations were carried out for extremely pure GaAs wafers grown by molecular beam epitaxy (MBE). Low-temperature photoluminescence measurements revealed that at least five sharp new emission lines are commonly formed near bound exciton emission region by the introduction of C for the dose range between 1015 and 1017 cm−3. It was for the first time demonstrated that the most dominant line among the above emission is identical to the g line in defect-induced bound exciton emission series which are frequently observed in rather impure MBE-grown or metalorganic chemical vapor deposition (MOCVD)-grown GaAs samples.
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Makita et al. (1985) studied this question.
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