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Diode lasers emitting at 947 nm with sub-monolayer deposited InAs/GaAs quantum dots in the active region have been fabricated. The 3.9 W output power limited by catastrophic optical damage and the peak conversion efficiency of 50.5% were achieved at 10°C in 100 µm wide stripes with uncoated facets.
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Zhukov et al. (1999) studied this question.
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