We present preliminary results of experiments detailing the changes in the valence band electronic structure of GaAs upon the submonolayer evaporative deposition of Ge. Measurements for electron wavevectors along the ?? and ??′ directions in the surface Brillouin zone show a loss of photocurrent from states in the valence band edge and the growth of sharp features. These features are found (1) near but within the calculated valence band edge (∠1.4 eV, ?? direction; ∠1.2 eV, ??′) (2) midband (∠3.2 eV, ??; ∠4.2 eV, ??′), (3) in and near the projected gap (∠4.1 eV, ??; ∠ 2.5 eV, ??′), and (4) in the ionic gap (∠7.1 eV). In addition, a new deeply bound (13 eV) GaAs surface state is observed.
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Denley et al. (1979) studied this question.