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Selective-area metalorganic chemical vapor deposition is used to fabricate a dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler. Threshold currents of 11.5 mA were obtained for 1100 μm long uncoated channels operating cw at room temperature. Both channels can be coupled into a single mode fiber without the need for an external coupler.
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Lammert et al. (1994) studied this question.
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