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The successful operation of a separate confinement heterostructure (SCH) AlGalnP/GaxIn1−xP (x = 0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25°C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10 × 200μm index guided laser diode at an emission wavelength of 691 nm.
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Katsuyama et al. (1990) studied this question.
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