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An improved self-aligned structure using two-step MOCVD technique is developed for GaAlAs high-power lasers. This structure is characterized by the introduction of a GaAlAs layer having low AlAs mole fraction at the regrowth interface to avoid the formation of native oxide film. The lasers operate at levels up to 100 mW in the stabilized fundamental transverse mode under CW operation at room temperature and show high reliability.
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Yoshizawa et al. (1987) studied this question.
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