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A model for the hole mobility in a two-dimensional hole gas confined at a modulation-doped heterostructure interface is proposed. All the major scattering processes in the two uppermost spin subbands are taken into account. The calculations are substantially simplified by effects of a strong free hole screening. The model explains experimental results of the temperature dependence of the hole mobility. It is shown that at large spacer widths, the predicted mobility limit exceeds 2×{}10⁵ cm²/V s and is entirely determined by acoustic-phonon deformation-potential scattering.
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W. Walukiewicz (1985) studied this question.
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