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A single mode c.w. AlxGa1−xAs/GaAs laser was made by metalorganic c.v.d. A double heterostructure with a V-shaped active region and a junction stripe geometry was grown on a groove-etched substrate. The minimum c.w. threshold current and the maximum differential quantum efficiency obtained were 15 mA and 65% (250 μm length cavity). The laser's beam shape was nearly circular, with an aspect ratio from 1.3 to 1.4.
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Mori et al. (1980) studied this question.
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