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Foreign ions changing their valencies in redox reactions give rise in LiNbO3 crystals to Nb4+ ions which are responsible for the photosensibility of the crystals. On the other hand, Fe doping decreases the concentrations of Nb4+ ions, O−− vacancies and free electrons produced by annealing under reducing conditions. By means of data about the O2 pressure dependence of electrical conductivity the concentrations of these defects and the weight loss of the crystals due to reduction are quantitatively calculated on the basis of the suggested defect model.
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W. Bollmann (1977) studied this question.
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