Theoretical analysis of dopant redistribution in silicon after implantation through an SiO2 mask

The redistribution after annealing in silicon of dopant implanted through a silicon oxide mask is discussed. The conditions which are essential to analyze diffusion profiles by simple Gaussian function are presented. The finite thickness of the oxide mask is taken into consideration. Experimental data of implanted P are compared with the exact and approximated solutions and it is shown that the use of the Gaussian approximation is within of ∼12% accuracy of the exact solution.