Properties of titanium (Ti) films deposited by collimation sputtering are studied. In Ti film deposition at the 0.5 µm ohmic contact area (aspect ratio: 3.6), conformality, y/x, defined by the thickness on the bottom, y, to the surface, x, is as low as 6% in conventional sputtering. However, it can be improved to 21% by employing collimation sputtering. Strongly (002)-oriented Ti film is deposited by conventional sputtering. Weakly (002)- and (011)-oriented grains, however, are grown in collimation film. with annealing at 650°C of the Ti film deposited on Si, different solid phase silicidation reactions occur at the Ti/Si. That is, metastable C49 TiSi2 grains are grown in conventional Ti film at 625-650°C. In collimation film, C54 TiSi2 grains are preferentially grown at this temperature. This result indicates the formation of a stable C54 TiSi2 layer with lower sheet resistance.
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Hara et al. (1992) studied this question.
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