High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

We report the growth of high-quality GaN heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition. These films have exhibited narrow x-ray-diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘ∼38 arc sec. These are the narrowest x-ray-diffraction rocking curve linewidths reported to date for any III-V nitride film. Electrical and optical measurements further indicate the samples to be of high quality.