Conformal vapor phase epitaxy

A novel technique of shaped crystal growth from the vapor is presented, which we call conformal vapor phase epitaxy. Using selective epitaxy as a main ingredient, we have obtained a conformal Si single-crystal growth between two SiO2 films. Since vertical growth is physically impeded by a SiO2 cap, lateral to vertical growth ratios (overgrowth ratios) can be controlled at will. Using a standard chemical vapor deposition reactor, submicron thick (100)Si layers have been laterally grown with a totally controlled overgrowth ratio >20.