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It has been determined that anodic oxidation of (Hg,Cd)Te occurs via a dissolution-precipitation mechanism followed by a bulk growth process which involves either interstitial transport of metal cations and/or hydroxyl anion transport via successive jumps. The initial film formation can be understood at least partially in terms of electrochemical parameters and, therefore, can be controlled in a rational manner. For example, stirring the anodization solution during dissolution prohibits film formation due to an increase in the rate of diffusion of ionic species away from the anode. MOS structures fabricated incorporating this electroetch in the passivation process show unique properties which provide evidence for a direct correlation between initial oxide formation and the resultant (Hg,Cd)Te surface electronic properties.
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Janousek et al. (1982) studied this question.
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