The techniques of deep level transient spectroscopy (OLTS) and optically detected magnetic resonance (ODMR) have been used to study ZnSe single crystals subjected to extended heat treatment in molten zinc. The zinc-fired material has been found to contain a set of electron traps at 0.34 eV below the conduction band and to exhibit a broad luminescence emission band, peaking at 810 nm, which ODMR shows to be due to a donor-acceptor recombination process. An energy level scheme consistent with these observations is presented together with evidence to suggest that the donors, identified with the 0.34 eV traps, are due to complex centres involving residual impurities.
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Verity et al. (1982) studied this question.
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