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April 21, 1986Applied Physics Letters

Kinetics of arsenic activation and clustering in high dose implanted silicon

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AKAvid KamgarAT&T (United States)FBF. A. BaiocchiTexas Instruments (United States)TST. T. ShengNational Taichung University of Science and Technology

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Kamgar et al. (1986) studied this question.

synapsesocial.com/papers/6a914a6a90ff22de3cb39e09https://doi.org/10.1063/1.96607
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Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The Diffusion of Ion‐Implanted Arsenic in Silicon1975 · 115 citations
  2. 2Junction leakage studies in rapid thermal annealed diodes1984 · 27 citations
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