Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 15, 1978Applied Physics Letters

Oxidation-enhanced diffusion of arsenic and phosphorus in near-intrinsic 〈100〉 silicon

View Full Paper
Ask AI
Bookmark
Share

Authors

DAD.A. AntoniadisMassachusetts Institute of TechnologyALAnn LinUniversity of South FloridaRDR.W. DuttonHEC Montréal

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Antoniadis et al. (1978) studied this question.

synapsesocial.com/papers/6a914acb85dcbcf0c3dd40echttps://doi.org/10.1063/1.90257
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Interactions between sequential dopant diffusions in silicon-a review1977 · 44 citations
  2. 2Diffusion of Phosphorus into Silicon1962 · 51 citations
  3. 3Defects in silicon substrates1977 · 159 citations
  4. 4Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation1978 · 135 citations
  5. 5A Diffusion Model for Arsenic in Silicon1971 · 50 citations