Ion-implanted PLZT for photoferroelectric image storage and display devices

A substantial increase in photoferroelectric image storage sensitivity has been achieved in ferroelectric-phase PLZT ceramics by implanting protons (H+ ions) into the image storage surfaces. The 10- to 100-fold increase in sensitivity is attributed to increased densities of carrier photoexcitation and trapping centers and to an increase in photon absorption in the near-UV. Preliminary measurements indicate that these effects are primarily caused by implantation-produced disorder.